Samsung Unveils High-Density 3D Memory Targeted at AI Data Centers
AI-generated image · US National Wire
The tech giant debuted zHBM and V10 BV-NAND at the FMS show, focusing on enterprise efficiency while consumer memory prices remain volatile.
Samsung has introduced a series of next-generation memory and storage solutions designed primarily for AI accelerators and data centers, according to reporting from Engadget. Unveiled at the Future of Memory and Storage (FMS) show in Santa Clara, the company's new zHBM architecture vertically stacks HBM memory directly atop AI accelerators. Samsung claims this design can increase performance by up to eight times and offers more than 10 times the memory density of current HBM5 technology, while improving energy efficiency by three times.
Beyond zHBM, Samsung debuted V10 BV-NAND, a storage technology for SSDs and memory cards that stacks over 400 layers of memory cells. Engadget reports this architecture increases memory density by approximately 58 percent compared to the V9 generation and improves I/O, read, and write performance. The company also showcased zNAND-O for edge AI environments and LPDDR5X-PIM, which integrates processing-in-memory technology to handle data processing within the memory itself.
While these enterprise-grade advancements are significant, Engadget notes that Samsung and SK Hynix—the two dominant forces in memory production—are struggling to meet the demand triggered by the AI bubble. This supply shortage is contributing to inflated pricing across consumer electronics, including laptops, smartphones, and gaming consoles.